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Si1902DL
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
V DS (V) R DS(on) ( ? )
I D (A)
? Halogen-free According to IEC 61249-2-21
Definition
20
0.385 at V GS = 4.5 V
0.630 at V GS = 2.5 V
0.70
0.54
? TrenchFET ? Power MOSFETs: 2.5 V Rated
? 100 % R g Tested
? Compliant to RoHS Directive 2002/95/EC
SOT-363
SC-70 (6-LEADS)
S 1
1
6
D 1
g
Marking in Code o d e
P PA A X
G 1
2
5
G 2
Lot Traceability
and Date Code
D 2
3
4
S 2
Part # Code
Top V iew
Ordering Information: Si1902DL-T1-E3 (Lead (Pb)-free with Tape and Reel)
Si1902DL-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
5s
20
±12
Steady State
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
T A = 25 °C
T A = 85 °C
I D
I DM
0.70
0.50
1
0.66
0.48
A
Continuous Source Current (Diode Conduction) a
I S
0.25
0.23
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
T A = 25 °C
T A = 85 °C
P D
T J , T stg
0.30
0.16
- 55 to 150
0.27
0.14
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Foot (Drain)
t ?? 5 s
Steady State
Steady State
R thJA
R thJF
360
400
300
415
460
350
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71080
S11-2043-Rev. J, 17-Oct-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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